SI2302DS دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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SI2302DS
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حجم فایل
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365.584
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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13
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مشخصات فنی
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Manufacturer:
NXP USA Inc.
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Series:
TrenchMOS™
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Packaging:
Cut Tape (CT)
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Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
20V
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Current - Continuous Drain (Id) @ 25°C:
2.5A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
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Rds On (Max) @ Id, Vgs:
85mOhm @ 3.6A, 4.5V
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Vgs(th) (Max) @ Id:
650mV @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
10nC @ 4.5V
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Vgs (Max):
±8V
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Input Capacitance (Ciss) (Max) @ Vds:
230pF @ 10V
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FET Feature:
-
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Power Dissipation (Max):
830mW (Tc)
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Operating Temperature:
-65°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
TO-236AB (SOT23)
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Base Part Number:
SI2
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detail:
N-Channel 20V 2.5A (Tc) 830mW (Tc) Surface Mount TO-236AB (SOT23)
